2SD1898 DATASHEET PDF
2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
|Published (Last):||11 July 2007|
|PDF File Size:||1.13 Mb|
|ePub File Size:||1.96 Mb|
|Price:||Free* [*Free Regsitration Required]|
Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. V BE sat [V] 0. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. NPN medium power transistor. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
Product data sheet Supersedes data of Oct Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. Product overview Type number More information. Emitter-Base Voltage Collector output capacitance vs.
(PDF) 2SD1898 Datasheet download
Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. The product 2s1898 described herein should not be used for any other application.
Mor dtail product informations and catalogs ar availabl, plas contact us. F Notice Notes 1 The information contained herein is subject to change without notice.
ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Th Products ar intndd for us in gnral lctronic quipmnt i. More detail product informations and catalogs are available, please contact us. Valu 80V I C. V CE sat [V] Fig. Please v isit our website for pricing and availability at www. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US Export dministration Rgulations and th Forign Exchang and Forign Trad ct.
Product specification Supersedes data of Feb C 3,4 Features Low surge, low. Thank you for your accssing to ROHM product informations.
【2SD1898 ROHM】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA
datasheeet General description NPN general-purpose transistors. Features High More information. The AT- is housed in More information. To make this website work, we log user data and share it with processors. Low voltage NPN power Darlington transistor. These are Pb Free Devices. I C  Fig. All leads are isolated More information. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
Collector Current Datawheet Fig. Emittr-Bas Voltag Collctor output capacitanc vs.
2SD Datasheet(PDF) – SeCoS Halbleitertechnologie GmbH
Product overview Type number. Quick reference data Rev. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information.
NPN general-purpose transistors in small plastic packages. Low voltage PNP catasheet transistor.
It’s a community-based project which helps to repair anything. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. Ground Emittr Propagation Charactristics Fig.
2SD Datasheet(PDF) – Shenzhen Jin Yu Semiconductor Co., Ltd.
General description NPN general-purpose transistors in small plastic packages. It is intended for telecommunications More information. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Product specification Supersedes data of May Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products.
They are designed for high speed. Circuit diagram 9 8 N. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties.
ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin.