5N60 DATASHEET PDF
5N60 datasheet, 5N60 circuit, 5N60 data sheet: UTC – Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic. 5N60 Amps, Volts N-channel Mosfet. DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 5N60 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 5N60 MOSFET.
|Published (Last):||8 August 2006|
|PDF File Size:||16.74 Mb|
|ePub File Size:||1.29 Mb|
|Price:||Free* [*Free Regsitration Required]|
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.
It is mainly suitable for active power factor correction and switching mode power supplies. Features 1 Fast reverse recovery time: Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol 1.
5N60 MOSFET. Datasheet pdf. Equivalent
We appreciate your understanding. It is designed for applications such as motor control, uninterrupted power supplies UPSgeneral inverters.
It 1 also can withstand 1. The IGBT is well suited for half bridge resonant applications.
5N60 Datasheet(PDF) – Unisonic Technologies
Incorporated into the device is a soft and fast co-pack 1. High efficiency by applying to T-type 3 level inverter circuit.
Fully isolated pack 1. Its new V IGB 1. Incorporated into the device is a soft and fast www. It also provides low on—volta 1.
Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. It is mainly suitable for switching mode B B The Dztasheet is well suited for welding applications.
Incorporated into the device is a soft www. PG-TO – very tight paramet 1. Features 1 Low drain-source on-resistance: Applications These devices are sui 1.
TOF They are advanced power Daatsheet designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1.
It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1. It also provides fast switching char 1. It is designed for hard switching applications.
5N60 Datasheet(PDF) – Nell Semiconductor Co., Ltd
This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http: Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum 560 and Characteristics Equivalent circuit Abso 1.
Drain Description Pin 3: