IRFPE50, SiHFPE Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole. IRFPE50 datasheet, IRFPE50 pdf, IRFPE50 data sheet, datasheet, data sheet, pdf, International Rectifier, V Single N-Channel HEXFET Power MOSFET in a . IRFPE50 datasheet, IRFPE50 circuit, IRFPE50 data sheet: IRF – Power MOSFET( Vdss=V, Rds(on)=ohm, Id=A),alldatasheet, datasheet, Datasheet.

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Region Macedonia Kosovo Global. Drain – Source Voltage Vdss.

IRFPE50, SiHFPE50 product information

Free technical support If something goes wrong, we will be ready and willing to help! Expected add to cart to know when it arrives. It shares with the IGBT an isolated gate that makes it easy to drive. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.


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Vishay – IRFPE50, SiHFPE50 – Power MOSFET

Computer components Hardware Network Notebook-Battery. Fluke, Mikroelektronika, Knipex and Logitech. Telecommunication measuring equipment Cable and pipe tracing Cooper networks IT networks Optical networks Spectrum analysers more Nut M3 PJP 0.

The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

Cables, Accessories Cables Accessories. Add to cart On stock. Drain-Source resistance Rds-on max. Screw M3 PJP 0. FETs are unipolar transistors as they involve single-carrier-type operation. Education equipment Industrial test tools Catalogues Laboratory measuring equipment Measuring of environmental and ambient parameters Equipment for testing of medical equipment Calibration equipment Lrfpe50 equipment Telecommunication measuring equipment.


Gate threshold voltage Vgs th.

Comments 0 Write your comment. Calibration equipment Electrical calibration equipment Pressure calibration equipment Temperature calibration equipment.

Comfort Flexible options, including door to door transportation. Compared to the other power irfpe05 devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.