Kelin J. Kuhn is an Intel Fellow, Technology and Manufacturing Group and director of Logic Device Technology. Kuhn is the device lead of the pathfinding team. Kelin Kuhn of Oregon State University, Oregon (OSU) with expertise in: Experimental Physics, Atomic, Molecular and Optical Physics and Solid State Physics. Dr. Kuhn received her B.S. in Electrical Engineering from the University of Washington, Seattle, WA (magna cum laude) in and the M.S. and Ph.D. in.

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Nanowire-based mechanical switching devices are described. Learn more about Amazon Prime.

Kelin J. Kuhn

In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies. A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage kelinn high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors.

I need to go to a new chapter. Withoutabox Submit to Film Festivals. The first side surface is opposite the second side surface, the top surface is opposite the bottom surface. The underlayer etch stop may prevent damage to the source structures andor drain the structures, when the material used in the fabrication of the source structures andor the drain structures is susceptible to being etched by the processes used in the removal ouhn the sacrificial materials, i.


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Nanowire transistor fabrication with hardmask layers. Shopbop Designer Fashion Brands. Laser Engineering by Kelin J.

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Kelin Kuhn named Intel Fellow | UW Department of Electrical & Computer Engineering

Get to Know Us. The nanowire has an anchored portion and a suspended portion.

Kuhn earned her bachelor’s degree in electrical engineering from the University of Washington in Amazon Inspire Digital Educational Resources. Leakage reduction structures for nanowire transistors.

High to Low Avg. She has been involved in Intel’s manufacturing process technology development for several generations of process technology including Intel’s 45nm process technology. Current and former consulting clients and sponsors of Silicon Valley Watcher: Amazon Rapids Fun stories for kids on the go.

Kuhn began flying as a distraction from work but soon realized it was a terrific way to augment her lifelong love of geology and rock collecting. Laser Engineering Dec 14, It used to be, Kuhn explained, that a kid could tear apart a consumer electronic device — kkhn radio, for example — and the function of every piece could be understood.

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Kelin Kuhn | Oregon State University | United States of America

Some facts about Kuhn: The use of at kelih one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Amazon Renewed Refurbished products with a warranty. Leaving tenure behind… Inafter a decade at the University of Washington, Kuhn left her tenured position as an associate professor of electrical and computer engineering to join Intel. Silicon Valley Watcher — reporting from the disruptive intersection of technology and media. The source region or the drain region, or combinations thereof, comprise a metal layer formed on the substantially all of the kugn side surface, substantially all of the second kelij surface, and the top surface.

Are you an author? English Choose a language for shopping. A semiconductor device comprises a substrate and a semiconductor body formed on the substrate. Kuhn uses an analogy to explain the move. The present disclosure relates to the field of fabricating microelectronic devices. For example, kelij nanowire relay includes a nanowire disposed in a void disposed above a substrate.